SATJ30 SolarPanels for Satellites
LEO MEO and GEO satellite long term and reliable electrical powersupply system is based on mass produced and can be customizedsolar cells in depending solar array configuration to fulfill differentmission requirements.The solution adopt upright lattice-matched structure of SATJ30solar cells,provide exceeds 30% electrical energy averageconversion.
Technical Specifications| Design and MechanicalData | |
| Substrate Material | Ge |
| Base Material | GalnP/GaAs/Ge |
| Size(mm) | 40.0x80.0，60.0x120.0，67.0x138.0 |
| Thickness(μm) | 180±20 |
| Average Weight(mg/cm2) | ≤110 |
| Service orbit | LEO, MEO, GEO |
| Typical Performance Data | |
| Fluence (e/cm²) | BOL； 1E14； 5E14； 1E15 |
| Efficiency nbare (%) | 30； 28.8； 27； 25.8 |
| Short Circuit Jsc(mA/cm²) | 17.5； 17.4； 16.8 ；16.3 |
| Open Circuit Voc(V) | 2.75； 2.64； 2.58； 2.53 |
| Current @ Max.Power Jm(mA/cm²) | 16.6； 16.4； 16； 15.5 |
| Voltage @ Max. Power Vm (V) | 2.45； 2.38； 2.28； 2.25 |
| AM0（1353W/m2,T=25°C)） | |
| Temperature Gradients | |
| Short Circuit Jsc (μA/cm²/°C) | 12 |
| Open Circuit Voc (mV/°C) | -5.6 |
| Current @ Max. Power Jm (μA/cm²/°C) | 9 |
| Voltage @ Max. Power Vm (V/°C) | -5.8 |
| Temperature Coefficient(20°C~80°C) | |
| Description | |
| Substrate | Ge |
| Solar cell structure | GalnP2/GaAs/Ge |
| GaAs growth method | MOCVD |
| Thickness | 175μm,140μm |
| Size(mm) | 39.8x60.4； 30.6x40.3； 40x80 |
| Bypass diode | Separate external； bypass diode； assembled at corner |
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CONTACT US
Beijing：China Galileo Industries No. 88, NanCaiYuan Street, XiCheng District, Beijing 100054, P.R. China
Shanghai：2nd Floor, 158 Shuanglian Road, Qingpu District, Shanghai
